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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BU2527DX
DESCRIPTION With TO-3PML package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 ae ae UNIT V V V A A A A W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=8A ;IB=1.6A IC=8A ;IB=1.6A VCE=BVCES; VBE=0 TC=125ae VEB=6V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IF=8A 5 MIN 800 7.5
BU2527DX
SYMBOL VCEO(SUS) VEBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF
TYP.
MAX
UNIT V V
5.0 1.1 1.0 2.0 110 11 10 2.0
V V mA mA
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2527DX
Fig.2 Outline dimensions
JMnic


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